Substrates with ultra fine pitch flip chip bumps

ABSTRACT

A method of attaching a chip to the substrate with an outer layer comprising via pillars embedded in a dielectric such as solder mask, with ends of the via pillars flush with said dielectric, the method comprising the steps of: (o) optionally removing organic varnish, (p) positioning a chip having legs terminated with solder bumps in contact with exposed ends of the via pillars, and (q) applying heat to melt the solder bumps and to wet the ends of the vias with solder.

CROSS-REFERENCE TO RELATED PATENT APPLICATION

This patent application is a division of U.S. patent application Ser.No. 14/150,683 by Hurwitz, titled “Substrates with Ultra Fine Pitch FlipChip Bumps,” that was filed on Jan. 8, 2014. The disclosure of U.S. Ser.No. 14/150,683 is incorporated by reference herein in its entirety.

BACKGROUND Field of the Disclosure

The present invention is directed to terminating interconnect structuresand to coupling between chips and substrates.

Description of the Related Art

Driven by an ever greater demand for miniaturization of ever morecomplex electronic components, consumer electronics such as computingand telecommunication devices are becoming more integrated. This hascreated a need for support structures such as IC substrates and ICinterposers that have a high density of multiple conductive layers andvias that are electrically insulated from each other by a dielectricmaterial.

The general requirement for such support structures is reliability andappropriate electrical performance, thinness, stiffness, planarity, goodheat dissipation and a competitive unit price.

Of the various approaches for achieving these requirements, one widelyimplemented manufacturing technique that creates interconnecting viasbetween layers uses lasers to drill holes through the subsequently laiddown dielectric substrate through to the latest metal layer forsubsequent filling with a metal, usually copper, that is depositedtherein by a plating technique. This approach to creating vias issometimes referred to as ‘drill & fill’, and the vias created therebymay be referred to as ‘drilled & filled vias’.

There are a number of disadvantages with the drilled & filled viaapproach. Since each via is required to be separately drilled, thethroughput rate is limited, and the costs of fabricating sophisticated,multi-via IC substrates and interposers becomes prohibitive. In largearrays it is difficult to produce a high density of high quality viashaving different sizes and shapes in close proximity to each other bythe drill & fill methodology. Furthermore, laser drilled vias have roughside walls and taper inwards through the thickness of the dielectricmaterial. This tapering reduces the effective diameter of the via. Itmay also adversely affect the electrical contact to the previousconductive metal layer especially at ultra small via diameters, therebycausing reliability issues. Additionally, the side walls areparticularly rough where the dielectric being drilled is a compositematerial comprising glass or ceramic fibers in a polymer matrix, andthis roughness may result in stray inductances.

The filling process of the drilled via holes is usually achieved bycopper electroplating. Electroplating into a drilled hole may result indimpling, where a small crater appears at the end of the via.Alternatively, overfill may result, where a via channel is filled withmore copper than it can hold, and a domed upper surface that protrudesover the surrounding material is created. Both dimpling and overfilltend to create difficulties when subsequently stacking vias one on endof the other, as required when fabricating high-density substrates andinterposers. Furthermore, it will be appreciated that large via channelsare difficult to fill uniformly, especially when they are in proximityto smaller vias within the same interconnecting layer of the interposeror IC substrate design.

The range of acceptable sizes and reliability is improving over time.Nevertheless, the disadvantages described hereinabove are intrinsic tothe drill & fill technology and are expected to limit the range ofpossible via sizes. It will further be noted that laser drilling is bestfor creating round via channels. Although slot shaped via channels maytheoretically be fabricated by laser milling, in practice, the range ofgeometries that may be fabricated is somewhat limited and vias in agiven support structure are typically cylindrical and substantiallyidentical.

Fabrication of vias by drill & fill is expensive and it is difficult toevenly and consistently fill the via channels created thereby withcopper using the relatively, cost-effective electroplating process.

Laser drilled vias in composite dielectric materials are practicallylimited to a minimum diameter of 60×10⁻⁶ m, and even so suffer fromsignificant tapering shape as well as rough side walls due to the natureof the composite material drilled, in consequence of the ablationprocess involved.

In addition to the other limitations of laser drilling as describedhereinabove, there is a further limitation of the drill & filltechnology in that it is difficult to create different diameter vias inthe same layer, since when drill different sized via channels aredrilled and then filled with metal to fabricate different sized vias,the via channels fill up at different rates. Consequently, the typicalproblems of dimpling or overfill that characterize drill & filltechnology are exasperated, since it is impossible to simultaneouslyoptimize deposition techniques for different sized vias.

An alternative solution that overcomes many of the disadvantages of thedrill & fill approach, is to fabricate vias by depositing copper orother metal into a pattern created in a photo-resist, using a technologyotherwise known as ‘pattern plating’.

In pattern plating, a seed layer is first deposited. Then a layer ofphoto-resist is deposited thereover and subsequently exposed to create apattern, and selectively removed to make trenches that expose the seedlayer. Via posts are created by depositing Copper into the photo-resisttrenches. The remaining photo-resist is then removed, the seed layer isetched away, and a dielectric material that is typically a polymerimpregnated glass fiber mat, is laminated thereover and therearound toencase the via posts. Various techniques and processes can then be usedto planarize the dielectric material, removing part of it to expose theends of the via posts to allow conductive connection to ground thereby,for building up the next metal layer thereupon. Subsequent layers ofmetal conductors and via posts may be deposited there onto by repeatingthe process to build up a desired multilayer structure.

In an alternative but closely linked technology, known hereinafter as‘panel plating’, a continuous layer of metal or alloy is deposited ontoa substrate. A layer of photo-resist is deposited on end of thesubstrate, and a pattern is developed therein. The pattern of developedphoto-resist is stripped away, selectively exposing the metalthereunder, which may then be etched away. The undeveloped photo-resistprotects the underlying metal from being etched away, and leaves apattern of upstanding features and vias.

After stripping away the undeveloped photo-resist, a dielectricmaterial, such as a polymer impregnated glass fiber mat, may belaminated around and over the upstanding copper features and/or viaposts. After planarizing, subsequent layers of metal conductors and viaposts may be deposited there onto by repeating the process to build up adesired multilayer structure.

The via layers created by pattern plating or panel plating methodologiesdescribed above are typically known as ‘via posts’ and feature layersfrom copper.

It will be appreciated that the general thrust of the microelectronicevolution is directed towards fabricating ever smaller, thinner, lighterand more powerful products having high reliability. The use of thick,cored interconnects, prevents ultra-thin products being attainable. Tocreate ever higher densities of structures in the interconnect ICsubstrate or ‘interposer’, ever more layers of ever smaller connectionsare required. Indeed, sometimes it is desirable to stack components onend of each other.

If plated, laminated structures are deposited on a copper or otherappropriate sacrificial substrate, the substrate may be etched awayleaving free standing, coreless laminar structures. Further layers maybe deposited on the side previously adhered to the sacrificialsubstrate, thereby enabling a two sided build up, which minimizeswarping and aids the attaining of planarity.

One flexible technology for fabricating high density interconnects is tobuild up pattern or panel plated multilayer structures consisting ofmetal vias or via post features having various geometrical shapes andforms in a dielectric matrix. The metal may be copper and the dielectricmay be a fiber reinforced polymer, typically a polymer with a high glasstransition temperature (T_(g)) is used, such as polyimide, for example.These interconnects may be cored or coreless, and may include cavitiesfor stacking components. They may have odd or even numbers of layers andthe via may have non circular shapes. Enabling technology is describedin previous patents issued to Amitec-Advanced Multilayer InterconnectTechnologies Ltd.

For example, U.S. Pat. No. 7,682,972 to Hurwitz et al. titled “Advancedmultilayer coreless support structures and method for their fabrication”describes a method of fabricating a free standing membrane including avia array in a dielectric, for use as a precursor in the construction ofsuperior electronic support structures, includes the steps offabricating a membrane of conductive vias in a dielectric surround on asacrificial carrier, and detaching the membrane from the sacrificialcarrier to form a free standing laminated array. An electronic substratebased on such a free standing membrane may be formed by thinning andplanarizing the laminated array, followed by terminating the vias. Thispublication is incorporated herein by reference in its entirety.

U.S. Pat. No. 7,669,320 to Hurwitz et al. titled “Coreless cavitysubstrates for chip packaging and their fabrication” describes a methodfor fabricating an IC support for supporting a first IC die connected inseries with a second IC die; the IC support comprising a stack ofalternating layers of copper features and vias in insulating surround,the first IC die being bondable onto the IC support, and the second ICdie being bondable within a cavity inside the IC support, wherein thecavity is formed by etching away a copper base and selectively etchingaway built up copper. This publication is incorporated herein byreference in its entirety.

U.S. Pat. No. 7,635,641 to Hurwitz et al. titled “integrated circuitsupport structures and their fabrication” describes a method offabricating an electronic substrate comprising the steps of; (A)selecting a first base layer; (B) depositing a first etchant resistantbarrier layer onto the first base layer; (C) building up a first halfstack of alternating conductive layers and insulating layers, theconductive layers being interconnected by vias through the insulatinglayers; (D) applying a second base layer onto the first half stack; (E)applying a protective coating of photo-resist to the second base layer;(F) etching away the first base layer; (G) removing the protectivecoating of photo-resist; (H) removing the first etchant resistantbarrier layer; (I) building up a second half stack of alternatingconductive layers and insulating layers, the conductive layers beinginterconnected by vias through the insulating layers, wherein the secondhalf stack has a substantially symmetrical lay up to the first halfstack; (J) applying an insulating layer onto the second half stack ofalternating conductive layers and insulating layers, (K) removing thesecond base layer, and (L) terminating the substrate by exposing ends ofvias on outer surfaces of the stack and applying terminations thereto.This publication is incorporated herein by reference in its entirety.

The via post technology described in U.S. Pat. Nos. 7,682,972, 7,669,320and 7,635,641 lends itself to mass production, with very large numbersof vias being simultaneously electroplated. As mentioned above, currentdrill & fill vias have an effective minimal diameter of about 60microns. In contradistinction, via post technology using photo resistand electroplating, enables higher densities of vias to be obtained. Viadiameters of as little as 30 micron diameter are possible and variousvia geometries and shapes could be cofabricated within the same layer.

Over time, it is anticipated that both drill & fill technologies and viapost deposition will enable fabrication of substrates with furtherminiaturization and higher densities of vias and features. Nevertheless,it would appear likely that developments in via post technology willmaintain a competitive edge.

Substrates enable chips to interface with other components. Chips haveto be bonded to substrates in a manner that provides reliable electronicconnections to enable electronic communication between chips andsubstrates.

Among the high density leading technologies used to interconnect theSubstrate to Chips is the well established “Flip Chip technology” inwhich solder bumps, lead free solder bumps, or copper bumps havingsolder or lead free solder on their tips, are grown on the Chipterminating pads and the Chip is then flipped over to interconnect itsbumps on the top surface pads of the Substrate. As Chip bumps andpitches become denser, advanced Substrates are usually equipped withbumps of their own to assist with the interconnection to the chip bumps.Such bumps on the substrate pads are also known as “SoP” (Solder onPad”) bumps—and usually consist of solder or lead free solder. They aregenerally applied to the substrate terminating pads by stencil printingfollowed by reflow, or by electroplating processes followed by reflow.Such bumps are usually “coined” by using heat and pressure to generate atop flat surface that can assist with the placement of the bumps fromthe die side.

When the Chip bumps come in contact with the SoP bumps through reflow,the solder material of the SoP bumps helps to generate a reliablemechanical and electronic contact with the Chip bump. Without the SoP,the solder material of the chip bumps may not be sufficient or may notbe able to completely flow and wet the entire surface of the substrate'sterminating pad thereby creating a reliability hazard or even adisconnect between the chip and the substrate. This is an especially avalid concern since most of the substrates have a solder mask externalprotective layer that by nature extends above the terminating substratepads thereby making these pads difficult to access without the SoPbumps.

It will be appreciated that the size and pitch of Chip bumps must bealigned as much possible to those of the SoP bumps. With ongoingdevelopments in chip technology, chips become ever denser, andconnection bumps will have to become ever smaller and more denselypacked as ever higher concentrations of contacts are required.Consequently, the application of SoP bumps on the substrate becomes evermore challenging. The application of SoP is, by nature, a lower yieldprocess than earlier substrate manufacturing steps, and it is one of thefinal processing steps in the substrate fabrication, thereby increasingscrap, rework, test and cost rates. Additionally, the more fine thepitch of subsequent generations of SoP bumps, the greater will be thelikelihood of failure by shorting between adjacent bumps after reflowand during chip assembly, thereby further reducing yields and increasingthe total package cost.

As post sizes shrink, it becomes ever more difficult to keep individualwires electronically isolated from each other to prevent shorting.Soldering is also tricky, in that too little solder may result in someconnections being broken. However, too much solder risks shortingbetween nearby connections.

Electroplating of solder bumps is known. For example, see U.S. Pat. Nos.5,162,257 and 5,293,006 to Yung and U.S. Pat. No. 6,117,299 to Rinne.

As the density of solder bumps increases and their size decreases due tothe ongoing drive towards ever greater miniaturization and increasedcomplexity, it becomes more and more difficult to prevent shorting whenthe solder is melted during reflow.

A particular problem of fabricating solder bumps on substrates isaligning them correctly with underlying copper vias, as required toprovide good electronic and mechanical coupling.

Embodiments of the present invention address these issues.

BRIEF SUMMARY

There is a need to provide SoP bumps on multilayer electronic supportstructures that are aligned with the copper vias of the multilayerelectronic support structures.

A first aspect of the invention is directed to providing a multilayercomposite electronic structure comprising feature layers extending in anX-Y plane, each adjacent pair of feature layers being separated by aninner via layer, the via layer comprising via posts that couple adjacentfeature layers in a Z direction perpendicular to the X-Y plane, the viaposts being embedded in an inner layer dielectric, the multilayercomposite structure further comprising at least one outer layer ofterminations comprising at least one micro bump wherein the at least onemicro bump comprises a via pillar capped with a solderable material.

Typically the at least one outer layer of terminations comprises a twodimensional array of microbumps.

Optionally, the thickness of the micro bump is between 15 micron and 50micron.

Optionally, the solderable material is selected from the groupconsisting of lead, tin, lead-tin alloys, tin-silver alloys, tin silvercopper alloys, tin copper alloys and tin copper nickel alloys.

Typically, the solderable material is tin based.

Preferably, the solderable material is lead free.

Preferably, the diameter of the at least one micro bump is in a rangecompatible with chip bumps.

Typically, the diameter of the at least one micro bump is in a range of60 to 110 microns.

Optionally, the diameter of the at least one micro bump is a minimum of25 micron.

Optionally, the separation of adjacent micro bumps is a minimum of 15micron.

Optionally, the pitch of the micro bumps is 40 microns.

Optionally, the outer dielectric has a smoothness of less than 100 nm.

Optionally, the outer dielectric has a smoothness of less than 50 nm.

Optionally, the outer dielectric is selected from the group consistingof NX04H (Sekisui), HBI-800TR67680 (Taiyo) and GX-13 (Afinomoto).

A second aspect is directed to a method of terminating a side of amultilayer composite structure having an outer layer of via postsembedded in a dielectric, comprising the steps of:

-   -   (i) thinning away the outer layer to expose the copper vias;    -   (ii) sputtering a layer of copper over the thinned surface;    -   (iii) applying, exposing and developing a penultimate pattern of        photoresist;    -   (iv) electroplating an external feature layer into the pattern;    -   (v) stripping away the penultimate pattern of photoresist;    -   (vi) applying, exposing and developing an ultimate pattern of        photoresist corresponding to the desired pattern of micro bumps;    -   (vii) pattern plating copper via posts into the ultimate pattern        of photoresist;    -   (viii) pattern plating solderable metal over the copper via        posts;    -   (ix) stripping away the ultimate pattern of photoresist;    -   (x) etching away the seed layer;    -   (xi) laminating a dielectric outer layer;    -   (xiv) plasma etching the dielectric outer layer to expose the        solderable cap of the via post, and    -   (xv) applying a finishing treatment to the solderable cap of the        via post.

Optionally, the dielectric outer layer is selected from the groupconsisting of a film dielectric and a dry film solder mask.

Optionally, step (xv) of applying a finishing treatment to thesolderable cap comprises coining by applying pressure to the solder capalong axis of the via post resulting in a flat coined solderable cap.

Optionally, step (xv) of applying a finishing treatment to thesolderable cap comprises coining by applying pressure along axis of thevia post together with heat to cause reflow under pressure, resulting ina flat coined solderable cap.

Optionally, step (xv) of applying a finishing treatment to thesolderable cap comprises applying heat to cause reflow without applyingpressure such that the solderable cap assumes a dome shape to surfacepressure.

Optionally, the method further comprises step (xii) of planarizing thedielectric outer layer.

Optionally, the planarizing comprises Chemical Mechanical Polishing.

Optionally the step of plasma etching comprises exposing to ionbombardment in a low pressure atmosphere comprising ionizing at leastone of the gases selected from the group consisting of oxygen,tetrafluoride carbon and fluorine.

Optionally, the method further comprises applying terminations on otherside of the substrate.

In one embodiment, applying terminations comprises:

-   -   (a) thinning the other side to expose the ends of copper vias;    -   (b) sputtering a copper seed layer;    -   (c) applying, exposing and developing a layer of photoresist;    -   (d) electroplating copper pads into the photoresist;    -   (e) removing the photoresist, and    -   (f) depositing solder mask over substrate between and        overlapping the copper pads.

A third aspect is directed to a method of applying solderable bumps toends of via posts comprising electroplating the via posts into apatterned photoresist; plating a solderable material over the via posts;removing the photoresist to expose the via posts and solderablematerial, applying a dielectric layer, and plasma etching the dielectriclayer to leave the solderable caps upstanding.

Typically the method further comprises applying a finishing treatment tothe solderable caps.

Optionally, the compacting comprises at least one of (i) applyingpressure along axis of the via posts to coin the solderable caps and(ii) applying heat to cause reflow of the solderable caps.

BRIEF DESCRIPTION OF THE DRAWINGS

For a better understanding of the invention and to show how it may becarried into effect, reference will now be made, purely by way ofexample, to the accompanying drawings.

With specific reference now to the drawings in detail, it is stressedthat the particulars shown are by way of example and for purposes ofillustrative discussion of the preferred embodiments of the presentinvention only, and are presented in the cause of providing what isbelieved to be the most useful and readily understood description of theprinciples and conceptual aspects of the invention. In this regard, noattempt is made to show structural details of the invention in moredetail than is necessary for a fundamental understanding of theinvention; the description taken with the drawings making apparent tothose skilled in the art how the several forms of the invention may beembodied in practice. In the accompanying drawings:

FIG. 1 is a flowchart illustrating the steps of a process formanufacturing very fine pitch ball grid array terminations on amultilayer composite electronic structure for connecting an IC thereto,using flip chip technology;

FIG. 2 is a schematic illustration of a multilayer composite electronicstructure;

FIG. 3 is a schematic illustration of the multilayer compositeelectronic structure of FIG. 2 having a first side thinned to expose theends of embedded pillars;

FIG. 4 is a schematic illustration of the multilayer compositeelectronic structure of FIG. 3 with a copper seed layer sputtered ontothe thinned surface;

FIG. 5 is a schematic illustration of the multilayer compositeelectronic structure of FIG. 4 after application, exposure anddeveloping of a photoresist to provide a pattern of pads;

FIG. 6 is a schematic illustration of the multilayer compositeelectronic structure of FIG. 5 after plating copper into thephotoresist;

FIG. 7 is a schematic illustration of the multilayer compositeelectronic structure with upstanding copper pads after stripping awaythe photoresist;

FIG. 8 is a schematic illustration of the multilayer compositeelectronic structure after application, exposure and developing of aphotoresist to provide a pattern of termination pegs;

FIG. 9 is a schematic illustration of the multilayer compositeelectronic structure after plating copper into the patternedphotoresist;

FIG. 10 is a schematic illustration of the multilayer compositeelectronic structure after plating a solderable metal or alloy over thecopper into the patterned photoresist

FIG. 11 is a schematic illustration of the multilayer compositeelectronic structure with an array of upstanding copper and solder bumpsafter stripping away the photoresist;

FIG. 12 is a schematic illustration of the multilayer compositeelectronic structure with an array of upstanding copper and solder bumpsafter etching away the copper seed layer;

FIG. 13 is a schematic illustration of the multilayer compositeelectronic structure with a film dielectric or dry film solder masklaminated over the solder bumps array;

FIG. 14 is a schematic illustration of the multilayer compositeelectronic structure after an optional stage of planarizing the filmdielectric or dry film solder mask laminated over the solder bumpsarray, typically using chemical mechanical polishing (CMP);

FIG. 15 a shows the other side of the multilayer composite electronicstructure ground down to expose the ends of the copper vias;

FIG. 16 shows the other side of the multilayer composite electronicstructure with a copper seed layer sputtered thereon;

FIG. 17 shows the other side of the multilayer composite electronicstructure with a pattern of photoresist after application, exposure anddevelopment;

FIG. 18 shows the other side of the multilayer composite electronicstructure with a copper layer electroplated into the pattern ofphotoresist;

FIG. 19 shows the other side of the multilayer composite electronicstructure after stripping away the photoresist;

FIG. 20 shows the other side of the multilayer composite electronicstructure after etching away the seed layer;

FIG. 21 shows the other side of the multilayer composite electronicstructure after depositing a patterned solder mask;

FIG. 22 shows the first side after thinning the dielectric film toexpose the solderable cap over the copper via post;

FIG. 23 shows the first side after densifying under pressure;

FIG. 24 shows the first side after densifying by reflow;

FIG. 25 is a flowchart illustrating the process for terminating theother side of the substrate with a ball grid array;

FIG. 26 is a schematic illustration of an in-line plasma etchingstation;

FIG. 27 is a scanning electron micro photograph (SEM micrograph) showingcopper pads separated with dielectric on the surface of a substrate andshowing upstanding copper via posts thereupon from above, i.e. from anangle of 0°;

FIG. 28 is a scanning electron micrograph showing copper pads separatedwith dielectric on the surface of the substrate and having upstandingcopper via posts thereupon from above and from an angle of 45°, at amagnifications such that the scale bar is 100 microns;

FIG. 29 is a scanning electron micrograph showing copper pads separatedwith dielectric on the surface of the substrate and having upstandingcopper via posts thereupon from above and from an angle of 45°, at amagnifications such that the scale bar is 20 microns, and the copper viapost and tin layer electroplated thereover are both clearly visible;

FIG. 30, is a scanning electron micrograph at the magnification and tiltof FIG. 4c , showing the tin layer 410 as a dome, after reflow;

FIG. 31 is a scanning electron micrograph at very high magnificationwherein the scale bar is 10 microns. An upstanding copper via 405 with atin cap 407 electroplated thereover using the same patterned photoresistto achieve perfect alignment is shown;

FIG. 32 is a scanning electron micrograph at very high magnificationwherein the scale bar is 10 microns. An upstanding copper via 405 with atin cap 407 electroplated thereover as per FIG. 30, but after subjectingto reflow;

FIG. 33 is an intermediate magnification scanning electron micrograph ofsolderable caps that have been subjected to pressure in the direction ofthe axis of the via posts;

FIG. 34 is a higher magnification scanning electron micrograph of asolderable cap that that has been pressed in the direction of the axisof the via posts;

FIG. 35 is an intermediate magnification scanning electron micrograph ofsolderable caps that have been subjected to pressure in the direction ofthe axis of the via posts;

FIG. 36 is a higher magnification scanning electron micrograph of asolderable cap that that has been subjected to pressure in the directionof the axis of the via posts by inserting into a press, and heated tocause reflow.

Like reference numbers and designations in the various drawingsindicated like elements.

DETAILED DESCRIPTION

In the description hereinbelow, support structures consisting of metalvias in a dielectric matrix, particularly, copper via posts in a polymermatrix, such as polyimide, epoxy or BT (Bismaleimide/Triazine) or theirblends, reinforced with glass fibers are considered.

It is a feature of Access' photo-resist and pattern or panel plating andlaminating technology, as described in U.S. Pat. Nos. 7,682,972,7,669,320 and 7,635,641 to Hurwitz et al., incorporated herein byreference, that large panels comprising very large arrays of substrateswith very many via posts may be fabricated. Such panels aresubstantially flat and substantially smooth.

It is a further feature of Access' technology that vias fabricated byelectroplating using photoresists and may be narrower than vias createdby drill & fill. At present, the narrowest drill & fill vias are about60 microns. By electroplating using photoresists, a resolution of under50 microns, or even as little as 30 microns is achievable. Coupling ICsto such substrates is challenging. One approach for flip chip couplingis to provide solder on pads (SoP) terminations, where solder bumps areapplied to the support structure to terminate copper vias. This isdifficult to achieve because of the fine pitch and small scale.

Embodiments of the present invention address this issue by providingsolder bumps at the end of the copper vias of the support structure.

One embodiment consists of Cu pillars with a tin tip.

With reference to FIG. 1 and to FIGS. 2 to 15, a process formanufacturing very fine pitch ball grid array terminations on amultilayer composite electronic structure for connecting an IC thereto,using flipchip technology is described.

Firstly, a multilayer composite support structure of the prior art isobtained—step 1(i). As shown in FIG. 2 the multilayer support structures100 includes functional layers 102, 104, 106 of components or features108 separated by layers of dielectric 110, 112, 114, 116, which insulatethe individual layers. Vias 118 through the dielectric layer provideelectrical connection between features 108 in the adjacent functional orfeature layers 102, 104, 106. Thus the feature layers 102, 104, 106include features 108 generally laid out within the layer, in the X-Yplane, and vias 118 that conduct current across the dielectric layers110, 112, 114, 116. Vias 118 are generally designed to have minimalinductance and are sufficiently separated to have minimum capacitancestherebetween.

The vias could be fabricated by drill & fill, but to provide greaterflexibility in fabrication, higher precision and more efficientprocessing by enabling large numbers of vias to be fabricatedsimultaneously, preferably the vias are fabricated by electroplatingusing the technology described in U.S. Pat. Nos. 7,682,972, 7,669,320and 7,635,641 to Hurwitz et al. The via post technology allows differentdiameter vias, non circular vias, faraday cages, embedded passivecomponents and other features. It will be appreciated that FIG. 2 is aschematic illustration for purposes of explanation. Real substrates mayhave more or less feature layers and more or less vias. Typically,substrates 100 comprise very large numbers of vias. The relativedimensions of vias, feature layers and dielectric, and, in subsequentschematics, of additional elements, are illustrative only, and are notto scale.

The side of the multilayer composite electronic structure 100 to which achip is to be coupled by flip chip bonding is first thinned—step (ii) toexpose the ends of the copper vias 110, see FIG. 3. Chemical,mechanical, or preferably, Chemical Mechanical Polishing CMP may beused. Next, a seed layer of copper 120 is sputtered over the thinnedsurface—step (iii). The resulting structure is schematic illustrated inFIG. 4.

With reference to FIG. 5, a layer of photoresist 122 is applied, exposedand developed to provide a pattern of pads—step (iv). As shown in FIG.6, copper pads 124 are then plated into the photoresist—step (v), thecopper seed layer 120 serving as an anode.

Now, the photoresist 122 FIG. 7 is stripped away—step (vi), exposing theupstanding copper pads 124 and the seed layer 120 therebetween.

With reference to FIG. 8 a second layer of photoresist 126 is applied,exposed and developed to provide a pattern of termination pegs—step(vii).

Copper is now plated into the patterned photoresist 126—Step (viii) toprovide the structure schematically shown in FIG. 9.

A solderable metal or alloy 130, typically tin (Sn) is electroplatedover the copper 128 into the patterned photoresist 126—step (ix),providing the structure illustrated schematically in FIG. 10.

There are various solderable alloys that may be electroplated. The mostcommon of these is the tin-lead eutectic mixture Sn₆₃Pb₃₇ having amelting point of 183° C. Other solder materials include pure lead.However, in the drive to limit usage of lead, various lead free soldershave been developed. These include pure tin, tin-silverSn_(96.5)Ag_(3.5) having a melting point of 221° C., and various tinsilver copper alloys such as Sn_(96.5)Ag_(3.0)Cu_(0.5) with a meltingpoint of 218-219° C., Sn_(95.8)Ag_(3.5)Cu_(0.7) with a melting point of217-219° C., Sn_(95.5)Ag_(3.8)Cu_(0.7) with a melting point of 217-219°C., Sn_(95.2)Ag_(3.8)Cu₁ with a melting point of 217° C. andSn_(95.5)Ag₄Cu_(0.5) with a melting point of 217-219° C. There are alsosome silver free compositions such as Sn_(99.3)Cu_(0.7) with a meltingpoint of 227° C. and Sn_(99.3)Cu_(0.7)+Ni with a melting point of 227°C. All of these electroplate well onto the shorted copper via postswithin the photoresist. Another candidate material is pure tin. DOWChemicals provides a sulfonic acid based tin plating solution SolderonECT Matte Tin which has been found to perform very well.

It will be appreciated that aligning solder bumps with drill fill viasis extremely difficult and increasingly so as via diameters decrease andthe number of vias per unit area increase. This lowers yields andreliability. In the present method described herein, the same pattern isused to electroplate via posts and the solder bumps thereon. Thismanufacturing technique totally overcomes these problems, ensuring goodalignment of solder bumps with the underlying copper via posts.

The photoresist 126 is now stripped away—step x, providing the structureillustrated in FIG. 11 which shows the multilayer composite electronicstructure with an array of upstanding copper and solder bumps.

The copper seed layer 120 is now etched away—step (xi). Providing thestructure shown in FIG. 12.

A film dielectric or dry film solder mask 132 is laminated—step (xii)over the array of solder bumps 130. A schematic illustration of themultilayer composite electronic structure 100 with the film dielectricor dry film solder mask 132 laminated over the array of solder bumps 130is shown in FIG. 13.

Although not shown, it will be appreciated that refluxing whilst thesolder caps 130 on the underlying copper via posts 128 are isolated fromeach other, is one way to prevent solder flow from shorting adjacentbumps.

Often, surface of the film dielectric/dry film solder mask 132 is ratherbumpy, and optionally, the film dielectric/dry film solder mask 132 isplanarized—step (xiii), see FIG. 14, typically using chemical mechanicalpolishing (CMP).

At this stage, it is convenient to terminate the other side of thesubstrate 100 with a ball grid array. The process for so doing is shownin FIG. 25, and the various structures are illustrated in FIG. 15 toFIG. 24.

Thus, with reference to FIG. 15 to FIG. 24 and to FIG. 25, to terminatethe other side of the multilayer composite electronic structure 100, theother side is ground down—step a, to expose the ends of the copper vias116, as schematically shown in FIG. 15. Copper is then sputtered—stepb—over the ground surface to form a copper seed layer 134 asschematically shown in FIG. 16. Referring to FIG. 17 photoresist 136 isnow applied, exposed and developed—step c. As shown in FIG. 18, a copperlayer 138 is now electroplated—step d—into the pattern of photoresist136. The photoresist 136 is now stripped away—step e, providing thestructure as illustrated in FIG. 19. The seed layer 134 is now etchedaway—step f, providing the structure illustrated in FIG. 20, and then apatterned solder mask 140 is applied—step g—around and overlapping thecopper pads 138. forming the structure shown in FIG. 21.

Solder balls may then be applied onto the copper pads 138 to create aball grid array (BGA) interconnect of the finished package (after dieassembly).

With reference to FIG. 26, an in-line plasma etching station 300 isschematically shown. This consists of a vacuum chamber 302 within whicha carrier 304 supports a substrate 306. Gases to be ionized for theplasma etching process, such as Oxygen, Tetrafluoro-carbon (CF₄) andArgon, for example, may be introduced through inlet 312 into the vacuumchamber 302. By maintaining a potential difference between the substrate306 and an upper electrode 308, a plasma zone 314 is created. Opticalemission spectrometer analyzers 310 detect the end point when the Sn isexposed and the copper is just covered in real time, allowing accuratecomputer control.

By an ion assisted plasma etching process using the equipment 300schematically shown in FIG. 3, the dielectric film 132 may be removed toexpose the solderable cap 130, typically of tin or a tin alloy—step(xv), see FIG. 22.

After electroplating, solderable alloys may include high surfaceroughness that without the usage of the right flux material during dieassembly—may create voids between the substrate bumps to the die bumpsduring the die assembly process. As a result, it is often required toapply a finishing treatment such as to “smooth” or “coin” the topsurface of the electro-plated bump on the substrate in order to furtherease and assist with the flip chip assembly process—step (xvi)a.Different surface treatment techniques may be used.

For example, with reference to FIG. 23, by applying pressure along theaxis of the via posts in a press, for example, the solderable caps maybe coined. To aid this process, heat may also be applied, to causereflow of the substrate bumps. Having an array of flat solderable capswith a fine, smooth surface 130 a aids attachment of a bump array of aflip chip and prevents voids at the interface of the die to substratebumps.

Alternatively, and usefully for attachment of low I/O count die(s) thatdo not contain bumps, the solderable caps on the substrate may beexposed to sufficient heat to cause reflow, which, in the absence of acompressing force to generate coining, results in the solderablematerial melting and forming dome shaped caps 130 b due to surfacetension of the solder meniscus—FIG. 24. In this case the non-coinedbumps on the substrate may be directly attached to non bumpeddie—directly on its flat pads that may contain Ni/Au or other finalmetal finishes.

It will be appreciated that compaction, with or without reflow ensuresthat the solderable caps 130 are isolated from each other, which helpsprevent solder flow shorting adjacent bumps.

With reference to FIG. 27, there is shown a scanning electronmicrophotograph (SEM micrograph) showing copper pads 402 separated withdielectric 404 on the surface of a substrate and showing upstandingcopper via posts 406 thereupon from above, i.e. from an angle of 0°. Thescale bar is 100 microns, and shows that the via posts are approx. 50microns in diameter.

Referring to FIG. 28 there is shown a scanning electron micrographshowing copper pads separated with dielectric on the surface of thesubstrate and having upstanding copper via posts thereupon from aboveand from an angle of 45°, at a magnifications such that the scale bar is100 microns.

With reference to FIG. 29 a scanning electron micrograph is shown,illustrating copper pads 402 separated with dielectric 404 on thesurface of the substrate and having upstanding copper via poststhereupon from above and from an angle of 45°, at a magnifications suchthat the scale bar 409 is 20 microns, and the copper via post 405 andtin layer 407 electroplated thereover are both clearly visible, thedenser tin 407 is lighter than the copper 405.

With reference to FIG. 30, there is shown a scanning electron micrographat the magnification and tilt of FIG. 29, showing the tin layer 410 as adome, after reflow. This is the type of finish obtained by the processstep xvi, variation b.

Referring to FIG. 31, a scanning electron micrograph at very highmagnification is shown, wherein the scale bar 411 shows 10 microns. Thisshows an upstanding copper via 405 with a tin cap 407 electroplatedthereover using the same patterned photoresist to achieve perfectalignment.

In FIG. 32, a scanning electron micrograph at the very highmagnification of FIG. 4e is shown, wherein the scale bar shows 10microns. Here, the tin cap 410 has been subject to heat and, due toreflow, has assumed a dome shape 410. This is the type of finishobtained by the process step xvi, variation b.

Referring to FIG. 33, an electron micrograph wherein a couple ofsolderable caps 420 that have been subjected to a pressing force withoutreflow are shown. In FIG. 34, a single solderable cap that have beensubjected to a pressing force without reflow is shown. Applying pressurecompresses the solderable caps and densifies them, providing a surfaceto which the bumps of a flip chip IC may be attached.

Referring to FIG. 35 and FIG. 36, copper vias 426 with compressedreflowed solderable caps 425 that have been subjected to pressure andreflow at the same time are shown. By supplying pressure and heat, flat,dense solderable caps are obtained which are dense and well adhered tothe copper vias.

Ideally the substrate bump has a similar diameter to the solder bumps onthe chips. There are typically 60 μm to 110 μm. The technology describedhereinabove allows bump diameters of as little as 35 μm. These may beseparated by a spacing of about 20 μm, providing a pitch of 55 μm.Indeed, micro bumps of 15 micron diameter separated by 15 micron spacesare also possible.

There are a number of polymer dielectric films that are commerciallyavailable that have been found appropriate for laminating the very highpitch substrate arrays of the outer layers. These include NX04Havailable from Sekisui, HBI-800TR67680 available from Taiyo and GX-13available from Ajinomoto.

The above description is provided by way of explanation only. It will beappreciated that the present invention is capable of many variations.

Several embodiments of the present invention have been described.Nevertheless, it will be understood that various modifications may bemade without departing from the spirit and scope of the invention.Accordingly, other embodiments are within the scope of the followingclaims.

Thus persons skilled in the art will appreciate that the presentinvention is not limited to what has been particularly shown anddescribed hereinabove. Rather the scope of the present invention isdefined by the appended claims and includes both combinations and subcombinations of the various features described hereinabove as well asvariations and modifications thereof, which would occur to personsskilled in the art upon reading the foregoing description.

In the claims, the word “comprise”, and variations thereof such as“comprises”, “comprising” and the like indicate that the componentslisted are included, but not generally to the exclusion of othercomponents.

What is claimed is:
 1. A method of terminating a first side of amultilayer composite structure having an outer layer of copper via postsembedded in a dielectric film, comprising the steps of: (i) thinningaway a surface of the dielectric film to expose the copper via posts;(ii) sputtering a seed layer of copper over the thinned surface; (iii)applying, exposing and developing a penultimate pattern of photoresistover the sputtered layer of copper corresponding to a desired patternfor an external feature layer; (iv) electroplating the external featurelayer into the penultimate pattern; (v) stripping away the penultimatepattern of photoresist; (vi) applying, exposing and developing anultimate pattern of photoresist onto the external feature layercorresponding to a desired pattern of micro bumps; (vii) pattern platingcopper via posts into the ultimate pattern of photoresist; (viii)pattern plating solderable metal over the copper via posts; (ix)stripping away the ultimate pattern of photoresist; (x) etching away theseed layer of copper; (xi) laminating a dielectric outer layer over theexternal feature layer and via posts; (xiv) plasma etching thedielectric outer layer to expose a solderable cap of the via post; and(xv) applying a finishing treatment to the solderable cap.
 2. The methodof claim 1 wherein the dielectric outer layer is selected from the groupconsisting of a film dielectric and a dry film solder mask.
 3. Themethod of claim 1 wherein step (xv) comprises applying pressure to thesolderable cap along an axis of the via post resulting in a flat coinedsolderable cap.
 4. The method of claim 1 wherein step (xv) comprisesapplying pressure along an axis of the via post together with heat tocause reflow under pressure, resulting in a flat coined solderable cap.5. The method of claim 1 wherein step (xv) comprises applying heat tocause reflow of the solderable cap, without applying pressure such thatthe solderable cap assumes a dome shape due to surface tension.
 6. Themethod of claim 1 wherein step (xiv) of plasma etching comprisesexposing the dielectric outer layer to ion bombardment in a low pressureatmosphere produced by ionizing at least one of the gases selected fromthe group consisting of oxygen, tetrafluoride carbon and fluorine. 7.The method of claim 1 further comprising step (xiii) of applyingterminations on a second side of the substrate opposite to the firstside.
 8. The method of claim 7, wherein applying terminations comprises:(a) thinning the second side to expose an end of the copper vias; (b)sputtering a copper seed layer; (c) applying, exposing and developing alayer of photoresist over the sputtered copper layer to produce apattern of pads; (d) electroplating copper pads into the photoresist;(e) removing the layer of photoresist; and (f) depositing a solder maskover the substrate between and overlapping the copper pads.